DeOSt software
The DeOSt software, developed at GeePs, allows numerical calculations and simulations of several characterization techniques applied to semiconductor materials, including:
- Conductivity,
- Photoconductivity,
- Absorption,
- Modulated photocurrent (MPC),
- Constant photocurrent method (ac & dc) (CPM),
- Double beam photoconductivity (DBP),
- Steady state photocarrier array (SSPG),
- Moving Grid Technique (MGT),
- Transient Photocurrent (TPC),
- Photo-Induced Transient Spectroscopy (PITS).
The user can define a density of states (DOS), transport parameters (mobilities, capture coefficients,...) as well as 'experimental' parameters (temperature, flux, electric field,...) to then perform numerical calculations related to a characterisation technique.
An example of a DOS defined for amorphous GeTe is shown in Fig. 1, with one donor state peak (brown), two acceptor state peaks (light blue) and two band tails (dark blue). The results of an MPC calculation are presented in Fig. 2a and compared with the experimental results (Fig. 2b). All trends are well reproduced.
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| Figure 1: DOS defined for amorphous GeTe |
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Figure 2.(a) MPC-DOS calculated from DeOSt compared to (b) experimental MPC-DOS. For more details see : C. Longeaud, J. Luckas, D. Krebs, R. Carius, J. Klomfass, M. Wuttig, "On the density of states of germanium telluride", J. Appl. Phys. 112, 113714 (2012) |
Contact : longeaud@geeps.centralesupelec.fr